Low Pressure Thermal CVD Synthesis of Tungsten Nitride Thin Film Using WCl6 as Tungsten Source.
نویسندگان
چکیده
منابع مشابه
Thermal decomposition mechanisms of tungsten nitride CVD precursors on Cu(111)
Chemisorption and thermal decomposition of metallorganic chemical vapor deposition precursors, (t-BuN)2W(NHBu-t)2, bis(tertbutylimido)bis(tert-butylamido)tungsten (BTBTT) and (t-BuN)2W(NEt2)2, bis(tert-butylimido)bis(diethylamido)tungsten (BTBDT), on Cu(111) have been investigated bymeans of thermal desorption spectroscopy (TDS) and synchrotron-basedX-ray photoelectron spectroscopy (SR-XPS) und...
متن کاملTemplate-free synthesis and characterization of mesoporous tungsten nitride nanoplates.
We report well-defined mesoporous β-W(2)N nanoplates prepared by using layered WO(3)·H(2)O without templates. The tungsten nitride nanoplates exhibit typical mesoporous structures with size-controlled monomodal pore distributions.
متن کاملCl4(PhCN)W(NPh) as a single-source MOCVD precursor for deposition of tungsten nitride (WNx) thin films
The tungsten phenylimido complex Cl4(PhCN)W(NPh) (2b) was tested as a single-source precursor for growth of tungsten nitride (WNx ) thin films, and results were compared to films previously deposited from the isopropylimido complexes Cl4(RCN)W(N i Pr) (1a, R /CH3; 1b, R /Ph). Films deposited from 2b exhibited growth rates ranging from 2 to 21 Å min 1 over a temperature range of 475 /750 8C, and...
متن کاملTungsten allylimido complexes Cl4(RCN)W(NC3H5) as single-source CVD precursors for WNxCy thin films. Correlation of precursor fragmentation to film properties.
A mixture of the tungsten allylimido complexes Cl(4)(RCN)W(NC(3)H(5)) (3a, R = CH(3) and 3b, R = Ph) was tested as a single-source precursor for growth of tungsten nitride (WN(x)) or carbonitride (WN(x)C(y)) thin films. Films deposited from 3a,b below 550 degrees C contained amorphous beta-WN(x)C(y), while those deposited at higher temperatures were polycrystalline. Film growth rates from 3a,b ...
متن کاملSynthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: NIPPON KAGAKU KAISHI
سال: 1996
ISSN: 2185-0925,0369-4577
DOI: 10.1246/nikkashi.1996.368